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| Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications. BUK109-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 29 75 150 50 UNIT V A W C m APPLICATIONS General controller for driving lamps motors solenoids heaters FEATURES Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP INPUT RIG POWER MOSFET LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT404 PIN 1 2 3 mb input drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL D TOPFET I P 2 1 3 S June 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDSS VIS ID ID IDRM PD Tstg Tj Tsold PARAMETER Continuous off-state drain source voltage1 Continuous input voltage Continuous drain current Continuous drain current Repetitive peak on-state drain current Total power dissipation Storage temperature Continuous junction temperature2 Lead temperature CONDITIONS VIS = 0 V Tmb 25 C; VIS = 10 V Tmb 100 C; VIS = 10 V Tmb 25 C; VIS = 10 V Tmb 25 C normal operation during soldering MIN. 0 -55 - BUK109-50GS MAX. 50 11 29 18 120 75 150 150 250 UNIT V V A A A W C C C OVERLOAD PROTECTION LIMITING VALUES With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL VISP VDDP(T) VDDP(P) PDSM PARAMETER Protection supply voltage 3 CONDITIONS for valid protection MIN. 5 MAX. - UNIT V Over temperature protection Protected drain source supply voltage VIS = 10 V Short circuit load protection Protected drain source supply voltage4 VIS = 10 V VIS = 5 V Instantaneous overload dissipation Tmb = 25 C 50 20 35 1.3 V V V kW OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL IDROM EDSM EDRM PARAMETER Repetitive peak clamping current Non-repetitive clamping energy Repetitive clamping energy CONDITIONS VIS = 0 V Tmb 25 C; IDM = 27 A; VDD 20 V; inductive load Tmb 95 C; IDM = 8 A; VDD 20 V; f = 250 Hz MIN. MAX. 29 625 40 UNIT A mJ mJ ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 2 UNIT kV 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The input voltage for which the overload protection circuits are functional. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. June 1996 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal resistance Rth j-mb Rth j-a Junction to mounting base Junction to ambient minimum footprint FR4 PCB (see fig. 33) CONDITIONS MIN. BUK109-50GS TYP. MAX. UNIT 1.3 50 1.67 - K/W K/W STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL V(CL)DSS V(CL)DSS IDSS IDSS IDSS RDS(ON) PARAMETER Drain-source clamping voltage Drain-source clamping voltage CONDITIONS VIS = 0 V; ID = 10 mA MIN. 50 TYP. 0.5 1 10 35 45 MAX. 70 10 20 100 50 60 UNIT V V A A A m m VIS = 0 V; IDM = 2 A; tp 300 s; 0.01 Zero input voltage drain current VDS = 12 V; VIS = 0 V Zero input voltage drain current VDS = 50 V; VIS = 0 V Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 C Drain-source on-state resistance IDM = 13 A; tp 300 s; 0.01 VIS = 10 V VIS = 5 V OVERLOAD PROTECTION CHARACTERISTICS TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input. SYMBOL EDS(TO) td sc Tj(TO) PARAMETER Short circuit load protection Overload threshold energy Response time 1 CONDITIONS Tmb = 25 C; L 10 H VDD = 13 V; VIS = 10 V VDD = 13 V; VIS = 10 V MIN. 150 TYP. 0.4 0.8 - MAX. - UNIT J ms C Over temperature protection Threshold junction temperature VIS = 10 V; from ID 1 A2 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES. 2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. June 1996 3 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET INPUT CHARACTERISTICS BUK109-50GS Tmb = 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input. SYMBOL VIS(TO) IIS VISR VISR IISL V(BR)IS RIG PARAMETER Input threshold voltage Input supply current Protection reset voltage1 Protection reset voltage Input supply current Input clamp voltage Input series resistance CONDITIONS VDS = 5 V; ID = 1 mA VIS = 10 V; normal operation Tj = 150 C VIS = 10 V; protection latched II = 10 mA to gate of power MOSFET MIN. 1.0 2.0 1.0 1.0 11 TYP. 1.5 0.4 2.6 2.5 13 4 MAX. 2.0 1.0 3.5 4.0 mA V k UNIT V mA V TRANSFER CHARACTERISTICS Tmb = 25 C SYMBOL gfs ID(SC) PARAMETER Forward transconductance Drain current2 CONDITIONS VDS = 10 V; IDM = 13 A tp 300 s; 0.01 VDS = 13 V; VIS = 10 V MIN. 10 TYP. 16 80 MAX. UNIT S A SWITCHING CHARACTERISTICS Tmb = 25 C. RI = 50 . Refer to waveform figures and test circuits. SYMBOL td on tr td off tf td on tr td off tf PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time CONDITIONS VDD = 13 V; VIS = 10 V resistive load RL = 2.1 VDD = 13 V; VIS = 0 V resistive load RL = 2.1 VDD = 10 V; VIS = 10 V inductive load IDM = 6 A VDD = 10 V; VIS = 0 V inductive load IDM = 6 A MIN. TYP. 1.5 6 18 9 2 1 22 1 MAX. UNIT s s s s s s s s REVERSE DIODE LIMITING VALUE SYMBOL IS PARAMETER Continuous forward current CONDITIONS Tmb 25 C; VIS = 0 V MIN. MAX. 29 UNIT A 1 The input voltage below which the overload protection circuits will be reset. 2 During overload before short circuit load protection operates. June 1996 4 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET REVERSE DIODE CHARACTERISTICS Tmb = 25 C SYMBOL VSDS trr PARAMETER Forward voltage Reverse recovery time CONDITIONS IS = 29 A; VIS = 0 V; tp = 300 s not applicable1 MIN. - BUK109-50GS TYP. 1.0 - MAX. 1.5 - UNIT V - ENVELOPE CHARACTERISTICS SYMBOL Ld Ls PARAMETER Internal drain inductance Internal source inductance CONDITIONS Measured from upper edge of tab to centre of die Measured from source lead soldering point to source bond pad MIN. TYP. 2.5 7.5 MAX. UNIT nH nH 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1000 ID & IDM / A BUK109-50GS Overload protection characteristics not shown 100 S RD (O N V )= DS /ID tp = 10 us 100 us 10 DC 1 ms 10 ms 100 ms 0 20 40 60 80 100 Tmb / C 120 140 1 1 10 VDS / V 100 Fig.2. Normalised limiting power dissipation. PD% = 100PD/PD(25 C) = f(Tmb) Normalised Current Derating Fig.4. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Zth / (K/W) BUK109-50GS 120 110 100 90 80 70 60 50 40 30 20 10 0 ID% 10 D= 1 0.5 0.2 0.1 0.1 0.05 0.02 0 1E-05 1E-03 t/s P D tp D= tp T t 0 20 40 60 80 Tmb / C 100 120 140 0.01 1E-07 T 1E-01 1E+01 Fig.3. Normalised continuous drain current. ID% = 100ID/ID(25 C) = f(Tmb); conditions: VIS = 5 V Fig.5. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 1 The reverse diode of this type is not intended for applications requiring fast reverse recovery. June 1996 5 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK109-50GS ID / A 11 100 10 9 8 BUK109-50GS VIS / V ID / A 100 BUK109-50GS 7 50 6 5 4 3 0 0 4 8 12 16 VDS / V 20 24 2 28 32 50 0 0 2 4 6 VIS / V 8 10 12 Fig.6. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VIS; tp = 250 s & tp < td sc ID / A BUK109-50GS VIS = 10 V Fig.9. Typical transfer characteristics, Tj = 25 C. ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 s gfs / S BUK109-50GS 100 90 80 70 60 50 40 30 20 8V 6V 15 10 4V 5 20 10 0 0 1 2 VDS / V 3 4 5 0 0 20 40 ID / A 60 80 100 Fig.7. Typical on-state characteristics, Tj = 25 C. ID = f(VDS); parameter VIS; tp = 250 s RDS(ON) / mOhm VIS / V = 4 100 5 6 7 BUK109-50GS 8 9 10 11 Fig.10. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 10 V; tp = 250 s a Normalised RDS(ON) = f(Tj) 1.5 1.0 50 0.5 0 0 20 40 60 ID / A 80 100 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.8. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VIS; tp = 250 s Fig.11. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 13 A; VIS = 10 V June 1996 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK109-50GS 100 td sc / ms BUK109-50GS 30 ID / A BUK109-50GS 10 20 typ. PDSM 1 10 0.1 0.1 1 PDS / kW 10 0 50 60 VIS / V 70 Fig.12. Typical overload protection characteristics. td sc = f(PDS); conditions: VIS 5 V; Tj = 25 C. PDSM% 120 Fig.15. Typical clamping characteristics, 25 C. ID = f(VDS); conditions: VIS = 0 V; tp 50 s VIS(TO) / V 2 max. 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 Tmb / C 80 100 120 140 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 typ. 1 min. Fig.13. Normalised limiting overload dissipation. PDSM% =100PDSM/PDSM(25 C) = f(Tmb) Energy & Time BUK109-50GS Fig.16. Input threshold voltage. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V II / mA BUK109-50GS 1 1.0 Time / ms 0.5 0.5 Energy / J Tj(TO) 0 -60 -20 20 60 100 Tmb / C 140 180 220 0 0 2 4 6 VIS / V 8 10 12 14 Fig.14. Typical overload protection characteristics. Conditions: VDD = 13 V; VIS = 10 V; SC load = 30 m Fig.17. Typical DC input characteristics, Tj = 25 C. IIS = f(VIS); normal operation June 1996 7 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK109-50GS 5 IIS / mA BUK109-50GS RESISTIVE TURN-ON VDS / V BUK109-50GS 4 VIS / V 10 PROTECTION LATCHED td on 3 tr ID / A 90% 2 RESET NORMAL 1 5 10% 10% 0 0 0 2 4 6 8 VIS / V 10 12 14 0 10 time / us 20 Fig.18. Typical DC input characteristics, Tj = 25 C. IISL = f(VIS); overload protection operated ID = 0 A IS / A BUK109-50GS Fig.21. Typical switching waveforms, resistive load. VDD = 13 V; RL = 2.1 ; RI = 50 , Tj = 25 C. 120 100 80 RESISTIVE TURN-OFF td off BUK109-50GS VDS / V 10 90% tf ID / A 60 40 20 0 0 0.2 0.4 0.6 0.8 VSD / V 1 1.2 1.4 1.6 5 VIS / V 90% 10% 0 0 10 20 time / us 30 40 50 Fig.19. Typical reverse diode current, Tj = 25 C. IS = f(VSDS); conditions: VIS = 0 V; tp = 250 s VDD Fig.22. Typical switching waveforms, resistive load. VDD = 13 V; RL = 2.1 ; RI = 50 , Tj = 25 C. VDD = VCL RL t p : adjust for correct ID D LD TOPFET I P TOPFET D.U.T. RI I P D D.U.T. S ID measure 0V 0R1 RI VIS S ID measure 0V 0R1 VIS Fig.20. Test circuit for resistive load switching times. Fig.23. Test circuit for inductive load switching times. June 1996 8 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK109-50GS INDUCTIVE TURN-ON 10 VIS / V td on BUK109-50GS V(CL)DSS VDS VDD 0 ID L VDS D TOPFET I + - VDD ID / A 5 tr 90% 0 VIS -ID/100 D.U.T. VDS / V 10% 10% 0 P Schottky 0 0 10 time / us 20 RIS S R 01 shunt Fig.24. Typical switching waveforms, inductive load. VDD = 10 V; ID = 6 A; RI = 50 , Tj = 25 C. Fig.27. Clamping energy test circuit, RIS = 50 . 2 EDSM = 0.5 LID V(CL)DSS /(V(CL)DSS - VDD ) INDUCTIVE TURN-OFF 10 90% tf td off BUK109-50GS VDS / V 1 mA Idss 100 uA ID / A 90% 5 VIS / V 10% 10 uA typ. 1 uA 0 0 10 20 time / us 30 40 50 100 nA 0 20 40 60 80 Tj / C 100 120 140 Fig.25. Typical switching waveforms, inductive load. VDD = 10 V; ID = 6 A; RI = 50 , Tj = 25 C. Fig.28. Typical off-state leakage current. IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V. Iiso normalised to 25 C 120 110 100 90 80 70 60 50 40 30 20 10 0 EDSM% 1.5 1 0.5 0 20 40 60 80 Tmb / C 100 120 140 -60 -20 20 60 Tj / C 100 140 180 Fig.26. Normalised limiting clamping energy. EDSM% = f(Tmb); conditions: ID = 27 A; VIS = 10 V Fig.29. Normalised input current (normal operation). IIS/IIS25 C = f(Tj); VIS = 10 V June 1996 9 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK109-50GS Iisl normalised to 25 C 50 VDDP(P) / V BUK109-50GS 1.5 40 max 30 1 20 10 0.5 -60 -20 20 60 Tj / C 100 140 180 0 0 2 4 6 VIS / V 8 10 Fig.30. Normalised input current (protection latched). IISL/IISL25 C = f(Tj); VIS = 10 V Fig.31. Maximum drain source supply voltage for SC load protection. VDDP(P) = f(VIS); Tmb 150 C June 1996 10 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max 4.5 max 1.4 max BUK109-50GS 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.32. SOT404 : centre pin connected to mounting base. Notes 1. Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.33. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". June 1996 11 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET DEFINITIONS Data sheet status Objective specification Product specification Limiting values BUK109-50GS This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1996 12 Rev 1.000 |
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